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When a non-uniformly distributed light falls on the non-uniformly distributed semiconductor (eg. pn junction), pairs of electron-hole excited by photons will evolve into a distribution of transverse electric potential, besides forming an ordinary vertical migration. Assuming a one-dimensional model for the above condition, we can obtain a differential equation for the transverse electric potential. After operating Laplace reform and leading boundary condition to the above formula, we can resolve the output photo-current collected by the two end-electrodes. The result shows the function relation between the transverse photocurrent and incident light spot position x on the sensitive surface indicating a new operating principle for the photoelectron position-sensitive detector.
When a non-uniformly distributed light falls on the non-uniformly distributed semiconductor (eg. Pn junction), pairs of electron-hole excited by photons will evolve into a distribution of transverse electric potential, besides forming an ordinary vertical migration. we can resolve the output photo-current collected by the two end-electrodes. The -dimensional model for the above condition, we can obtain a differential equation for the transverse electric potential. result shows the function relation between the transverse photocurrent and incident light spot position x on the sensitive surface indicating a new operating principle for the photoelectron position-sensitive detector.