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前言半导体电极表面由于晶格缺陷,悬挂键,杂质以及吸附的离子,腐蚀产物等形成了不同类型(即施主型和受主型)和具有不同能量的表面态,在光电化学能量转换中起着不同的作用.如表面态作为表面电荷的复合中心,促进和加速了光生电荷的复合使光电流下降,从而影响了光电转换效率的提高.有些表面态在界面的氧化还原电荷转移中起了中介作用,导致增加光电流和降低光腐蚀.另外表面态的存在会使某些半导体电极产生费米能级的钉扎现象,而改变了界面性能.还可能产生亚能隙的吸收使光谱响应范围有所展宽等.对于多晶半导体由于
Introduction The semiconductor electrode surface forms different types (ie donor and acceptor) and different surface states with different energies due to lattice defects, dangling bonds, impurities and adsorbed ions, corrosion products and the like, and plays a role in photoelectrochemical energy conversion Different functions, such as the surface state as the surface charge recombination center, accelerates and accelerates the recombination of photogenerated charges, which reduces the photocurrent, thus affecting the photoelectric conversion efficiency. Some surface states play an intermediary role in the redox charge transfer at the interface Which leads to the increase of photocurrent and the reduction of photo-corrosion. In addition, the existence of surface states may lead to pin Fermi level pinning in some semiconductor electrodes, which may change the interfacial properties. It may also result in the absorption of sub-bandgap which makes the spectral response range Have broadened, etc. For polycrystalline semiconductor due