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石墨烯作为一种拥有优异性能的二维晶体材料,其制备方法与潜在应用在最近几年内得到了广泛研究.与现有半导体硅工艺相匹配的化学气相沉积方法因其能够以低成本大规模制备高质量石墨烯,逐渐成为工业化大规模制备石墨烯的首选技术.然而,金属上通过化学气相沉积生长的石墨烯需要转移到绝缘衬底上才可以用于器件制备、电学性能表征等后期工作,而目前的转移技术无法避免对石墨烯的质量造成影响.如果在绝缘衬底表面直接生长石墨烯将有效避免石墨烯的转移工艺,从而有望在目标绝缘衬底上直接获得大面积高质量石墨烯.本文系统性介绍了近几年来绝缘衬底上生长石墨烯的相关研究进展,总结并展望了绝缘衬底上石墨烯生长、应用的发展前景与需要攻克的难题.
Graphene has been extensively studied as a two-dimensional crystal material with excellent properties in recent years and its preparation methods and potential applications have been widely used in recent years.Chemical vapor deposition methods that match the existing semiconductor silicon technology are widely used because of their low cost and large scale However, the graphene grown on metal by chemical vapor deposition needs to be transferred to an insulating substrate to be used for later work such as device preparation, electrical characterization, and the like , But the current transfer technology can not avoid the impact on the quality of graphene.If the direct growth of graphene on the surface of the insulating substrate will effectively avoid the transfer process of graphene in order to be expected to directly obtain a large area of high quality graphite This paper systematically introduces the research progress of graphene growth on insulating substrates in recent years, summarizes and prospects the growth prospects of graphene on insulating substrates, the application prospects and the need to overcome the problems.