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为了研究基片的表面状态对金刚石成核密度的影响，采用了抛光清洁的基片、对样品划痕、基片加热脱附等不同的表面处理方法，对样品表面进行预处理，得到了不同表面处理条件下的金刚石成核密度。尝试了在低真空（10－1Pa量级）条件下，去除表面的氧化硅及吸附活性的含碳原子，以提高金刚石的成被密度，得到了较理想的结果，成核密度为109／cm2。
In order to study the effect of the surface state of the substrate on the diamond nucleation density, a polished substrate was used to pretreat the surface of the sample differently for different methods of surface treatment such as sample scratching and substrate desorption Diamond nucleation density under surface treatment conditions. At low vacuum (10-1Pa order), the surface silicon oxide and active carbon atom were removed to increase the density of diamond. The ideal result was obtained. The nucleation density was 109 / cm2 .