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本文介绍一种与Ⅳ阱硅栅CMOS集成电路技术完全兼容的高压MOS器件的设计方法和制备工艺。这种高压MOS器件可以和CMOS逻辑电路、模拟电路集成在同一芯片上而不需任何附加工艺步骤。此种器件的闽电压为|1±0.2|V,漏击穿电压大于300V,泄漏电流小于50nA,当宽长此为115,栅偏压V_(GS)=10V时,其饱和电流大于35mA,跨导大于4000μ,而导通电阻小于600Ω。该器件在等离子显示、静电复印、场致发光、高低压开关等方面有广泛的应用。
This article presents a design method and fabrication process for a high-voltage MOS device that is fully compatible with the IV-well silicon gate CMOS integrated circuit technology. This high-voltage MOS device and CMOS logic circuits, analog circuits integrated on the same chip without any additional process steps. The device voltage is 1 ± 0.2 | V, leakage breakdown voltage is greater than 300V, the leakage current is less than 50nA, when the width is 115, the saturation current is greater than 35mA when the gate bias V GS is 10V, Transconductance greater than 4000μ, while the on-resistance is less than 600Ω. The device has a wide range of applications in plasma display, electrophotography, electroluminescence, high and low voltage switches.