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为了研究纳米尺度器件中量子力学效应对传输特性及动态特性的影响,在器件模拟软件TAURUS中实现了量子修正的漂移扩散模型(QDD),并对具有负栅极-源漏极交叠结构的超薄沟道双栅器件进行了数值模拟。结果显示:非对称栅压的控制方法使得器件具有动态可调的阈值电压,能够动态地适应高性能与低功耗的要求。通过优化栅极与源漏区的交叠长度可以降低栅极电容,从而提高器件的动态特性,提高电路的工作速度。
In order to study the influence of quantum mechanical effect on the transmission and dynamic characteristics of nanoscale devices, a quantum-modified drift-diffusion model (QDD) is implemented in the device simulation software TAURUS, and the QDD with a negative gate-source-drain overlap structure The ultrathin channel double gate device has been numerically simulated. The results show that the asymmetric gate voltage control method makes the device have a dynamically adjustable threshold voltage, which can dynamically adapt to the requirements of high performance and low power consumption. The gate capacitance can be reduced by optimizing the overlap length of the gate and the source / drain regions to improve the dynamic characteristics of the device and improve the operating speed of the circuit.