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表面起伏靶是惯性约束聚变(ICF)分解实验中的重要实验用靶。为了得到调制深度大于10μm光刻胶表面正弦图形,采用激光全息光刻的方法,固定曝光条件,同时保证曝光量足够,然后通过控制显影条件来实现起伏深度的变化。成功得到了调制深度分别为15μm,25μm,35μm,周期分别为20μm,55μm和75μm的表面正弦调制图形
Surface undulation targets are important experimental targets in the experiment of inertial confinement fusion (ICF) decomposition. In order to obtain the sinusoidal pattern of the photoresist surface with the modulation depth greater than 1.0 μm, a laser holographic lithography method is adopted to fix the exposure condition while ensuring sufficient exposure, and then the variation of the undulating depth can be realized by controlling the developing conditions. Successfully obtained the modulation depth of 1 5μm, 2 5μm, 3 5μm, the period of 20μm, 55μm and 75μm surface sinusoidal modulation pattern