【摘 要】
：
BiFeO3 (BFO) thin films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by the pulsed-laser deposition (PLD) technique at a low temperature of 450℃. The
【机 构】
：
School of Materials Science and Engineering
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BiFeO3 (BFO) thin films were prepared on Pt(111)/TiO2/SiO2/Si(100) substrates by the pulsed-laser deposition (PLD) technique at a low temperature of 450℃. The XRD results indicate that the BFO thin films are of perovskite structure with the presence of small amount of second phases. The oxygen pressures have great effect on the crystalline structures and dielectric properties of BFO thin films. The dielectric constant of the BFO thin films decreases with increasing oxygen pressures,achieving 186,171 and 160 at the frequency of 104 Hz for the oxygen pressures of 0.666,1.333 and 13.332 Pa,respectively. The BFO thin films prepared at the oxygen pressure of 0.666 Pa reveal a saturated hysteresis loop with the remanent polarization of 7.5 μC/cm2 and the coercive field of 176 kV/cm.
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