高速 CMOS 电路(以下简称 HCMOS)采用的是单片多晶硅刻槽氧化 CMOS 工艺。因此它既保持了低功耗、高输入阻抗以及高输入噪声容限的特点,且速度比 CMOS 提高十倍。HCMOS 电路的管脚排列、功能及速度均与 LSTTL 相同。HCT 是 HCMOS 电路中的 Q 系列(即 RCAQMOS 系列)。它的输出电平与TTL、LSTTL 相容时,即可直接驱动 TTL。本文着重就 HCT 系列的一般特性及应用方面作一简介。一、一般特性HCMOS 电路的有效沟道长度 L 缩短,栅源和栅漏间扩散层无重迭,栅极氧化膜电容 C_(o(?))变小。栅极电容 C_G 也变小,因此它的最高工作频率 f_(max)正比于g_m/WLC_(ox)=g_m/C_G,所以 HCMOS 速度大大提高。其中 g_m 为 MOS 管的跨导,W 为沟道宽度。HCMOS 电路的输入阻抗有数(?)兆欧,输入电流 High-speed CMOS circuit (hereinafter referred to as HCMOS) uses a single polysilicon trench oxidation CMOS process. Therefore, it maintains the characteristics of low power consumption, high input impedance and high input noise tolerance, and is ten times faster than CMOS. HCMOS circuit pinout, function and speed are the same with LSTTL. HCT is the Q series in the HCMOS circuit (ie RCAQMOS series). Its output level and TTL, LSTTL compatible, you can directly drive the TTL. This article focuses on the HCT series of general characteristics and application of a brief introduction. I. General Characteristics The effective channel length L of the HCMOS circuit is shortened. There is no overlap between the gate and source diffusion layers, and the gate oxide film capacitance C_ (o (?)) Becomes smaller. The gate capacitance C_G also becomes smaller, so its maximum operating frequency f_ (max) is proportional to g_m / WLC_ (ox) = g_m / C_G, HCMOS speed is greatly increased. Which g_m MOS transconductance tube, W for the channel width. The input impedance of the HCMOS circuit is several megawatts (MΩ) and the input current