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利用6.42 MeV 窄共振核反应~1H(~(19)F,αγ)~(16)O 研究了辉光放电制备的非晶硅多层膜中氢的深度分布、游动性及其随退火温度的关系。引进高斯分辨函数简化了数据处理过程。对氢污染及测氢标准也进行了讨论。
The depth distribution and mobility of hydrogen in the amorphous silicon multilayer films prepared by glow discharge were studied by using narrow resonance nuclear reaction ~ 1H (~ (19) F, αγ) ~ (16) O at 6.42 MeV. relationship. The introduction of Gaussian resolution function simplifies the data processing. Hydrogen pollution and hydrogen measurement standards are also discussed.