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本文报导了非故意掺杂ＩｎＧａＡｓＳｂ本底浓度的降低和掺Ｔｅｎ型ＧａＳｂ和ＩｎＧａＡｓＳｂ的ＭＢＥ生长与特性的研究结果。结果表明，通过生长工艺的优化，ＧａＳｂ和ＩｎＧａＡｓＳｂ的背景空穴浓度可分别降至１．１×１０~（１６）ｃｍ~（－３）和４×１０~（１６）ｃｍ~（－３），室温空穴迁移率分别为９４０ｃｍ２／ｖ．ｓ和２６０ｃｍ~２／ｖ．ｓ。用Ｔｅ作ｎ型掺杂剂，可获得载流子浓度在１０~（１６）～１０~（１８）ｃｍ~（－３）的优质ＧａＳｂ和ＩｎＧａＡｓＳｂ外延层，所研制的材料已成功地制备出Ｄ_λ~＊＝４×１０~（１０）ｃｍＨｚ~（１／２）／Ｗ的室温ＩｎＧａＡｓＳｂ红外探测器和室温脉冲ＡｌＧａＡｓＳｂ／ＩｎＧａＡｓＳｂ双异质结激光器。
In this paper, we report the reduction of the background concentration of InGaAsSb unintentionally doped and the results of MBE growth and properties of Ten-type GaSb and InGaAsSb. The results show that the background hole concentration of GaSb and InGaAsSb can be reduced to 1.1 × 10 ~ (16) cm ~ (-3) and 4 × 10 ~ (16) cm ~ (-3) , Room-temperature hole mobility were 940cm2 / v. s and 260cm ~ 2 / v. s. With Te as n-type dopant, high-quality GaSb and InGaAsSb epitaxial layers with carrier concentration of 10 ~ (16) ~ 10 ~ (18) cm ~ (-3) can be obtained. The developed materials have been successfully prepared D_λ ~ * = 4 × 10 ~ (10) cmHz ~ (1/2) / W room temperature InGaAsSb infrared detectors and room temperature pulsed AlGaAsSb / InGaAsSb double heterostructure laser.