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在 In As自组织量子点的 Ga As覆盖层中引入生长停顿 ,将这种量子点结构作激光器的有源区 ,与不引入生长停顿的量子点激光器进行对比后发现 :生长停顿可以降低激光器的阈值电流 ,提高其特征温度 ,改善激光波长的温度稳定性 .简单的分析表明 ,量子点中的能带填充效应影响了激光波长的温度特性 .
The introduction of growth pause into the Ga As blanket of InAs self-organized quantum dots, comparing this quantum dot structure to the active region of a laser, with quantum dot lasers that do not introduce growth pause, found that growth pause reduces laser Threshold current to improve its characteristic temperature and improve the temperature stability of the laser wavelength.The simple analysis shows that the bandgap effect in the quantum dot affects the temperature characteristics of the laser wavelength.