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An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance (ECR) plasma by optical emission spectroscopy (OES).The ECR plasma en-hanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on anα-Al_2O_3 substratc.X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at2θ= 34.48°,being sharper and more intense with the increase in the N_2:trimethylgallium(TMG)flow ratio.The results demonstrate that the electron cyclotron resonance-plasma enchanced met-alorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous forthe deposition of GaN film at a low growth temperature.
An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance (ECR) plasma by optical emission spectroscopy (OES). The ECR plasma en-hanced metalorganic chemical vapor deposition technology was taken to grow GaN film on an α-Al 2 O 3 substratc. X-ray diffraction (XRD) analyzes showed that the peak of GaN (0002) was at 2θ = 34.48 °, being sharper and more intense with the increase in the N_2: trimethylgallium (TMG) flow ratio.The results demonstrate that the electron cyclotron resonance -plasma enchanced met-alorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous forthe deposition of GaN film at a low growth temperature.