论文部分内容阅读
20010401 使用液态原材料和直流等离子物理气相沉积法制备SiC涂层 ——Wilden J. Galvanotechnik, 2000.91(6):1 680(德文)示出了Si-C相图，给出了SiC涂覆工艺的文献评述，着重于涂层成分和化学计算值的差别， 详细介绍了使用单独预合成三氯甲硅烷和三甲氯硅烷的实际生产情况。
20010401 Preparation of SiC Coatings Using Liquid Starting Materials and DC Plasma-Physical Vapor Deposition - Wilden J. Galvanotechnik, 2000. 91 (6): 1 680 (German) shows a Si-C phase diagram showing the SiC coating process Literature reviews, focusing on differences in coating composition and stoichiometry, detail the actual production of trichlorosilane and trimethylchlorosilane using pre-synthesized trichlorosilane alone.