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A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1” and logic “0” at a read voltage of + 2V, and the stored logical value (“1” or “0”) could be read out in 30 min.
The ferroelectric memory diode consisting of Au / PZT / BIT / p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The PE curve of the PZT / BIT / p- Si filmsystem had an asymmetry saturated hysteresis loop with P, = 15 μC / cm2 and Ec = 48 kV / cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The CV hysteresis loop and the IV curve showed a memory effect derived from the ferroelectric polarization of PZT / BIT films, and the current density was 6.7 × 10 -8 A / cm 2 at a voltage of + 4 V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic “1 ” and logic “0 ” at a read voltage of + 2V, and the stored logical value ( “1 ” or ") could be read out in 30 min.