The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm 2 , respectively. The n-ZnO / p-Si heterojunction was fabricated by depositing high quality single crystalline aluminum-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the mechanism of the current transport was proposed based on the current structure was the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When the transport charge is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V> 0.6 V), the space charge limited effect becomes the main transport mechanism. The current- voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA / cm 2, respecti vely.