采用固相反应法制备了四方相结构的SnO2靶材,选用蓝宝石衬底,利用脉冲激光沉积法在不同温度下生长了一系列SnO2薄膜。X射线衍射测试结果表明,SnO2薄膜具有四方金红石结构,并且沿a轴近外延生长。另外,在倾斜衬底上生长的SnO2薄膜上观察到了激光感生电压(LIV)效应,并研究了衬底温度对SnO2薄膜中LIV效应的影响。结果表明,随着生长温度从500℃增加到800℃,SnO2薄膜中的LIV信号的峰值电压先增加后减小,响应时间随衬底温度的升高先降低后增加,此外,存在一个最佳的衬底温度,使得SnO2薄膜的LIV信号的峰值电压达到最大,响应时间达到最小。在生长温度为750℃的SnO2薄膜中探测到响应最快的LIV信号,在紫外脉冲激光辐照下,峰值电压约为4V,响应时间为98ns,信号的上升沿为28ns,与激光的脉宽相当。 The SnO2 target with tetragonal phase structure was prepared by solid-state reaction method. A series of SnO2 thin films were grown at different temperatures by pulsed laser deposition using a sapphire substrate. X-ray diffraction results show that the SnO2 film has a tetragonal rutile structure and grows nearly epitaxially along the a-axis. In addition, the laser induced voltage (LIV) effect was observed on the SnO2 thin film grown on a tilted substrate, and the effect of substrate temperature on the LIV effect in the SnO2 thin film was investigated. The results show that as the growth temperature increases from 500 ℃ to 800 ℃, the peak voltage of LIV signal in SnO2 film first increases and then decreases, and the response time decreases first and then increases with increasing substrate temperature. In addition, there is an optimum Of the substrate temperature, making the SnO2 film LIV signal peak voltage to achieve the maximum response time to a minimum. The fastest responding LIV signal was detected in the SnO2 thin film grown at 750 ℃. The peak voltage was about 4V, the response time was 98ns, the rising edge of the signal was 28ns, quite.