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通过使用两种不同波长的飞秒激光脉冲分别与硅材料相互作用,证明了在相同的激光通量下,激光功率和脉冲数之间的比例将对硅表面微结构的形成起决定性作用。在飞秒激光与硅表面相互作用的过程中,脉冲数表征激光与样品之间的作用时间长短,决定了能量传递到材料内部的深浅程度;而激光功率则表征硅表面材料的消融与挥发程度。因此,恰当地选择激光功率和脉冲数能有效形成表面具有较高尖峰的微结构硅,从而获得在宽光谱范围内均具有高吸收效率的微纳硅基光伏材料。这一结果对表面微结构材料的有效制备、表面形态控制,及其相应的光电属性等都有着重要的意义。
By using two different wavelengths of femtosecond laser pulses interacting with the silicon material respectively, it is proved that the ratio between the laser power and the pulse number will play a decisive role in the formation of microstructure on the silicon surface under the same laser flux. During the interaction between the femtosecond laser and the silicon surface, the pulse duration characterizes the duration of the interaction between the laser and the sample, which determines the degree of energy transfer to the interior of the material. The laser power characterizes the ablation and volatility of the silicon surface material . Therefore, the proper choice of laser power and pulse number can effectively form microstructured silicon with higher spikes on the surface, so as to obtain the micro-nano-silicon photovoltaic material with high absorption efficiency in a wide spectral range. This result is of great significance to the effective preparation of the surface microstructure materials, the control of the surface morphology and the corresponding photoelectric properties.