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以金刚石膜作为绝缘埋层， 利用金刚石膜上的薄层硅（ Ｓ Ｏ Ｄ）技术， 制作 ５４ Ｈ Ｃ Ｔ０３ Ｃ Ｍ Ｏ Ｓ／ Ｓ Ｏ Ｄ 结构的集成电路． 对该电路在辐照后的恢复特性进行研究． 结果表明， Ｓ Ｏ Ｄ 电路在大剂量辐照后的恢复能力明显强于体硅电路； 常规非辐照环境下的高温退火工艺更有利于辐照后的 Ｓ Ｏ Ｄ 电路的快速恢复
An integrated circuit of 54 H C T03 C M O S / S O D structure was fabricated using thin film silicon (S D) technology on a diamond film using a diamond film as an insulating buried layer. The recovery characteristics of the circuit after irradiation were studied. The results show that the recovery capability of S O D circuit after high dose irradiation is obviously stronger than that of bulk silicon circuit. The high temperature annealing process under normal non-irradiation environment is more conducive to the rapid recovery of the irradiated S O D circuit