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通过偏压微波等离子体化学气相沉积法 (MPCVD)成功地在Si(10 0 )上生长出具有 [10 0 ]织构的金刚石薄膜 .阐述了实验过程 ,讨论了偏压对 [10 0 ]织构金刚石薄膜成核与生长条件的影响 ,偏压有助于成核密度的提高和有利于 [10 0 ]织构生长 .采用SEM、Raman光谱等对所得样品进行了表征 .
A diamond film with [10 0] texture was successfully grown on Si (100) by a bias microwave plasma chemical vapor deposition method (MPCVD). The experimental process was described and the effect of bias on the [10 0] The effects of bias voltage on the nucleation and growth conditions of the diamond films were investigated. The bias voltage was conducive to the increase of nucleation density and the growth of [100] texture. The obtained samples were characterized by SEM and Raman spectroscopy.