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研究了取向接近(110)[001]、(320)[001]和(110)[1(?)2]的鉄硅(3.25% Si)单晶体,在采用不同的压下速率(每軋制一次的压下量)經过60%,70%,80%和85%軋制后的冷軋和再結晶織构。(110)[001]取向的单晶体在采用較低的压下速率軋制退火后,再結晶織构随着压下量增加会从(110)[001]逐漸变化到(310)[001],但采用較高的压下速率軋制退火后,再結晶織构都是(110)[001],并不随压下量增加而改变。改变軋制时的压下速率,对(320)[001]取向单晶体的再結晶織构也有与以上相似的影响,但对(110)[1(?)2]取向单晶体的再結晶織构就沒有明显的影响。分析实驗結果后,认为再結晶織构的形成是一种同位再結晶过程,从这种观点出发,可以滿意地解释再結晶織构随压下速率及压下量改变而变化的規律。
Silicon (3.25% Si) single crystal with orientations close to (110) [001], (320) [001] and (110) [1 (?) 2] was investigated at different reduction rates ) Of cold rolled and recrystallized texture after 60%, 70%, 80% and 85% rolling. The recrystallized texture gradually changes from (110) [001] to (310) [001] as the reduction of the (110) [001] oriented single crystal after rolling annealing at a lower reduction rate However, after rolling and annealing at a higher reduction rate, the recrystallized texture is (110) [001] and does not change as the reduction is increased. Changing the reduction rate during rolling also has similar effect on the recrystallization texture of (320) [001] -oriented single crystals. However, the recrystallization texture of (110) [1 No obvious effect. After analyzing the experimental results, it is considered that the formation of recrystallized texture is a kind of isotopic recrystallization process. From this point of view, it is possible to satisfactorily explain the regularity that the recrystallization texture changes with the reduction rate and the rolling reduction.