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用结方法,即光电容,热激电容和热激电流法研究了GaP红色发光二极管的效率退化。二极管分成两种类型;A型呈现出较大退化,而B型管呈现较小退化。退化前发现4种少数载流子陷井,退化后至少发现二种多数载流子陷井。新的多数载流子陷井的出现与效率的退化有密切关系。这些陷井引起反常的光电容谱位移。这些陷井的能级是0.55和0.76ev,浓度为10~(15)/cm~3量级。孤立的氧施主的密度没有变化。
The efficiency degradation of GaP red light-emitting diodes was investigated by the junction method, ie photo-capacitance, heat shock capacitance and heat shock current method. Diodes are divided into two types; Type A presents greater degradation, while Type B tubes show less degradation. Four kinds of minority carrier traps were discovered before degeneration, and at least two kinds of majority carrier traps were found after degradation. The emergence of new majority carrier traps is closely related to the degradation of efficiency. These traps cause abnormal photoconductive spectrum shifts. The energy levels of these traps are 0.55 and 0.76 eV at concentrations of 10-15 / cm3. Oxygen donor isolated density did not change.