This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by
Two types of organic light-emitting diodes with structures of ITO/N,N’-bis(1-naphthyl)-N,N’-diphenyl,1,1’-biphenyl-4,4’-diamine (NPB)/tris(8-hydroquinolinat