论文部分内容阅读
随着微电子领域的快速发展,用于集成电路中器件互连的铜薄膜要求具有无缺陷并且高纯度等特征。本文介绍了利用化学气相沉积技术与原子层沉积技术沉积铜薄膜工艺的研究;特别是,综述了铜-卤素、β-二酮、烷氧、脒基、胍基、环戊二烯基等各类铜前驱体的研究现状与发展趋势;概述了应用所述前驱体进行铜薄膜沉积的参数及所制备铜薄膜的导电性能。最后,介绍了本课题组对铜薄膜沉积的研究进展。
With the rapid development in the field of microelectronics, copper films used for interconnecting devices in integrated circuits are required to be defect-free and high-purity. This paper introduces the research on the technology of depositing copper thin film by using chemical vapor deposition technology and atomic layer deposition technology. In particular, the effects of copper-halogen, β-diketone, alkoxy, amidino, guanidino and cyclopentadienyl The research status and development trend of copper precursors are summarized. The parameters of deposition of copper thin films using the precursors and the conductivity of copper thin films are summarized. Finally, the research progress on copper film deposition is introduced.