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本文提出在氧化铝陶瓷基板上,采用两步溅射铜膜的方法来制备纯铜型陶瓷覆铜板,即先在低氩气压下高能溅射形成Cu氧化物过渡层,再利用高气压下低能量的铜粒子沉积形成均匀的铜层。使用FESEM对其进行微观表征并进行拉脱强度测试,最后利用传统刻蚀方式在覆铜板上进行电路制作并用显微镜观察线路边缘形貌。研究结果表明,采用该工艺制作的陶瓷覆铜板,铜层结构致密、均匀,金属与陶瓷的拉脱强度达到6.2MPa以上,覆铜板能够用常规腐蚀工艺进行光刻腐蚀,工艺兼容性好。具有生产成本低廉,操作简单,制备过程绿色无污染等优点。
This paper proposes a two-step sputtering method of copper film on the alumina ceramic substrate to prepare pure copper ceramic CCL, that is, sputtering of low-argon pressure to form a Cu oxide transition layer, and then use high pressure low The energy of the copper particles deposited to form a uniform layer of copper. FESEM was used to characterize the microstructure and pull off strength test. Finally, the circuit was fabricated on the CCL by traditional etching method and the edge morphology of the circuit was observed with a microscope. The results show that the copper clad laminate produced by this process has a dense and uniform copper structure with a pull-off strength of 6.2 MPa or above. The copper clad laminate can be etched by conventional etching process with good process compatibility. With low production costs, simple operation, the preparation of green pollution-free and so on.