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选用垂直于其表面的射频磁场对镀金膜的硅片进行了感应加热,由于磁场对材料加热具有选择性,感应热量首先作用于硅片上的金膜内,硅片先被传导加热到一定温度,然后被感应加热。理论上分析了该方法的可行性,初步试验结果表明,虽然金膜厚度低于感应趋肤深度,但在没有应用感应加热基座的情况下,几秒钟内就形成了金硅共晶相。另外,升温速度快,有效减少了加热过程中金对硅的扩散影响,该方法可广泛用于微系统封装中的圆片键合。
Select the RF magnetic field perpendicular to the surface of the gold-plated film of silicon induction heating, magnetic field due to the material has a selective heating, the first induction of heat on the silicon in the gold film, the silicon was first heated to a certain temperature , Then induction heating. The feasibility of this method is theoretically analyzed. The preliminary experimental results show that although the thickness of the gold film is lower than the depth of the sensing skin, the gold silicon eutectic phase is formed within a few seconds without using the induction heating base . In addition, the heating rate is fast, effectively reducing the effect of gold on the diffusion of silicon during heating, and the method can be widely used for wafer bonding in a micro-system package.