A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-ty
This article reported the electrochemical behaviors of a novel hollow carbon microspheres/manganese dioxide nanosheets (micro-HC/nano-MnO2) composite prepared b
Transparent electrode based on silver nanowires (AgNWs) emerges as an outstanding altative of indium tin oxide film especially for flexible electronics. However