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报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．
Reported the use of PECVD technology to deposit C60 polymer film on the polished surface of P-Si substrate and the formation of An / C60-Polymer / P-Si structure by steamed gold on the surface of the film. Several charge density and dielectric constants in polymer films were deduced from the different C-V properties after normal temperature and temperature treatments. The distortion of C-V curves after temperature-excursion was discussed.