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本文对MIS结构的C-t过程作了动力学分析.结果表明:一般情况下,界面态只在界面的耗尽和半导体表面反型的过程中对C-t特性有不可忽视的影响;当半导体表面强反型以后,C-t过程的Zerbst图的非线性行为主要是半导体表面层中少子产生寿命的不均匀空间分布造成的.文中首次提出利用脉冲偏置C-t过程测量半导体表面层中少子产生寿命空间分布的方法,并以II型硅MOS电容器为例作了测量.
In this paper, the dynamic analysis of the Ct process in MIS structure is made. The results show that in general, the interface states have an irreversible influence on the Ct characteristics only when the interface is depleted and the semiconductor surface is inverted. Type, the nonlinear behavior of the Zerbst plot in the Ct process is mainly caused by the non-uniform spatial distribution of the lifetime of the minority carriers in the semiconductor surface layer.This paper first presents a method for measuring the lifetime distribution of the minority carriers in the semiconductor surface layer by pulse bias Ct process , And the type II silicon MOS capacitor as an example was measured.