论文部分内容阅读
采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响。结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响。AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势。随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加。弹性模量随温度的变化趋势与硬度的基本一致。在可见光区域AlN薄膜透过率超过90%,基本属于透明膜。基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降。
AlN films were prepared on optical glass substrate by reactive magnetron sputtering combined with heating temperature control power. The phase structure of the films was analyzed by X-ray diffraction (XRD) The hardness and elastic modulus of the films were measured. The optical properties of the films were tested by ellipsometer and grating spectrometer. The effects of substrate temperature on the structure and properties of the films were analyzed and studied. The results show that the AlN film obtained by this method is crystalline and belongs to the hexagonal system. The temperature has little effect on the diffraction peak intensity of AlN (100) surface, but has a great influence on the diffraction peak of (110) surface. Therefore, The preferred orientation has a certain influence. The FWHM of the AlN (100) peak decreases with increasing temperature, indicating that the grain size tends to increase with increasing temperature. With the increase of deposition temperature, the film hardness increases from 8 GPa at 150 ℃ to 10 GPa at 350 ℃. With the increase of substrate temperature, the hardness of the film increases. The trend of elastic modulus with temperature is consistent with the hardness. In the visible light region AlN film transmittance of more than 90%, basically belongs to the transparent film. The substrate temperature also has a significant effect on the refractive index of the film. The refractive index increases with the increase of the temperature. However, the results of ellipsometry and transmission line analysis show that the deposition rate of the AlN film decreases with the increase of the temperature.