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基于聚合物绝缘材料和半导体材料,采用溶液法旋涂工艺制作了有机薄膜晶体管(OTFT),通过尝试不同旋涂速度、表面预处理、退火温度等条件来优化聚合物绝缘材料的制备工艺参数,获得了良好的绝缘性的聚合物绝缘材料和器件特性。结果表明,绝缘层旋涂速度过快、表面用氧等离子体处理时间过长和退火温度过低都会降低有机栅极绝缘层(OGI)的绝缘性和OTFT的器件特性。采用硅氧烷材料作为聚合物栅极绝缘层,其溶液由硅氧烷单体和溶剂加丙二醇甲醚醋酸酯(PGMEA)混合而成。OGI的旋涂速度为1 200r/min,退火温度为140℃,在旋涂有机半导体材料之前,需在退火之后的硅氧烷表面进行短暂的氧离子灰化反应。得到的有机薄膜晶体管迁移率约为0.4cm2·V-1·s-1,亚阈值摆幅降至约1.2V/dec,开关比大于104,并且当外加电场为1MV/cm时,漏电流密度低于1.4×10-6 A/cm2(Vds=-40V)。
Based on polymer insulating materials and semiconductor materials, organic thin film transistors (OTFTs) were fabricated by solution spin-coating. Optimum process parameters of polymer insulating materials were optimized by experimenting with different spin-coating speed, surface pretreatment and annealing temperature, A good insulating polymer insulating material and device characteristics are obtained. The results show that the insulating layer is spin coated too fast, the surface is treated with oxygen plasma for too long and the annealing temperature is too low will reduce the insulation of the organic gate insulating layer (OGI) and the device characteristics of OTFT. Silicone material is used as the polymer gate insulating layer and the solution is composed of a mixture of a siloxane monomer and a solvent plus propylene glycol methyl ether acetate (PGMEA). OGI spin coating speed of 1 200r / min, the annealing temperature is 140 ℃, before spin-coating organic semiconductor materials, the surface of the silicon oxide after annealing for a short oxygen ion ashing reaction. The resulting organic thin film transistor has a mobility of about 0.4 cm 2 · V -1 · s -1, a subthreshold swing of about 1.2 V / dec, a switching ratio of greater than 104, and a leakage current density of 1 MV / cm at an applied electric field Lower than 1.4 × 10 -6 A / cm 2 (Vds = -40 V).