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以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.
Zinc oxide ZnO thin film was grown on quartz substrate by RF magnetron sputtering with high purity ZnO as target material and argon as sputtering gas.The film was grown along the preferred orientation of (002) Was 1.2μm, showing electrical insulation properties.The sputtered ZnO thin films were isothermally annealed in the temperature range of 10-3Pa, 510-1000 K for 1 h, and the Hall measurements at room temperature showed that the electrical conductivity of the ZnO thin films had been changed from insulating -n -p-n-type semiconductor.XPS test showed that the Zn / O ratio of ZnO thin film decreases with the increase of annealing temperature, but it has been a zinc-rich ZnO, indicating that undoped zinc-rich ZnO can also form p-type The formation of conductive undoped zinc-rich ZnO thin films can be attributed to the VZn acceptor concentration that overcomes the compensation effects of intrinsic donor VO and Zni.