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利用分子束外延生长装置生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。利用该材料制作的激光二极管 ,室温连续工作 ,功率为 1W ,斜率效率达到 1 0 4W /A
GaAlAs / GaAs graded-index single quantum well structure materials were grown by molecular beam epitaxy. The laser diodes fabricated by this material work continuously at room temperature with a power of 1W and a slope efficiency of 104 W / A