论文部分内容阅读
制成了GaAlAsSb异质结低漏电流光电二极管。在20V反向偏置时,这种器件的漏电流为7～9nA(25～35μA/cm~2),电容约1PF。器件是采用Be离子注入平面结构,Ga_(1-x)Al_xAsSb(x～0.15)中的净施主浓度为2×10~(15)cm~(-3)。
Made of GaAlAsSb heterojunction low leakage current photodiode. At 20V reverse bias, this device has a leakage current of 7 to 9 nA (25 to 35 μA / cm 2) and a capacitance of about 1 PF. The device is implanted into a planar structure with Be ions. The net donor concentration in Ga 1-x Al x As Sb (x ~ 0.15) is 2 × 10 ~ (15) cm ~ (-3).