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采用双极脉冲磁控反应溅射结合快速热处理技术在硅衬底表面制备多层SiNx/Si/SiNx薄膜。利用拉曼光谱和光致发光(PL)光谱研究退火处理对薄膜微结构及其发光性能的影响。拉曼测试结果表明薄膜经高温度退火处理后会出现晶态比为30%的单晶和非晶共存的硅纳米颗粒,其尺寸约为6.6nm;而光致发光谱的测试结果则表明薄膜中单晶硅和非晶硅纳米颗粒的尺寸分别为3.79nm和3.03nm;此外还发现薄膜的发光现象主要是由于缺陷态和量子点的量子限域效应的共同作用,并以缺陷态引起的发光为主。
Multi-layer SiNx / Si / SiNx thin films were prepared on the surface of silicon substrate by bipolar pulsed magnetron reactive sputtering combined with rapid thermal process. Raman spectroscopy and photoluminescence (PL) spectroscopy were used to study the effect of annealing treatment on the microstructure and luminescent properties of the films. Raman test results show that the film after annealing at high temperature will appear 30% crystalline silicon and amorphous single crystal coexistence of silicon nanoparticles, the size of about 6.6nm; and photoluminescence spectra of the test results show that the film The size of single-crystal silicon and amorphous silicon nanoparticles were 3.79nm and 3.03nm respectively. In addition, it was also found that the luminescence of the thin-film was mainly due to the combined effect of the defect state and the quantum confinement effect of the quantum dot and the defect state Glow-based.