论文部分内容阅读
金属氧化物（如ＺｒＯ２，ＴｉＯ２等）随氧分压不同而改变其电导率这一性质被广泛地用来制作氧敏传感器。传统的传感器大多是体材料或厚膜材料，工作时需加高温。文中描述的是ＴｉＯ２薄膜材料与Ｐｔ薄膜形成的肖特基势垒高度随氧分压不同而改变的氧敏现象，测定了该肖特基二极管的氧敏特性，并讨论了其敏感机理
The properties of metal oxides (such as ZrO2, TiO2, etc.) that change their electrical conductivity depending on the partial pressure of oxygen are widely used to make oxygen-sensitive sensors. Most of the traditional sensor body material or thick film material, work need to increase the temperature. The paper describes the oxygen sensing phenomenon that the Schottky barrier height formed by TiO2 thin film material and Pt thin film changes with different partial pressure of oxygen. The sensitivity of the Schottky diode is also discussed.