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本文对非常小的真空和半导体场效应晶体管的电子输运、空间电荷效应、阻抗电平、功率电平和频率极限进行了比较。并对寄生电容也进行了比较。介绍了极限弹道电子速度、电压和电流,并预测了器件的等效电路元件、电流增益和功率增益截止频率及尺寸精缩。由于这些微结构具有高频微波性能,所以两种器件都能在毫米波范围内有效地工作,不过真空微电子器件的电压和功率比较高。同时还指出需要与频率成正比的大电流密度,但电阻要低。
This article compares the electron transport, space charge effects, impedance levels, power levels, and frequency limits of very small vacuum and semiconductor field effect transistors. The parasitic capacitance is also compared. The paper introduces the speed, voltage and current of the limit ballistic electron, and predicts the equivalent circuit components, current gain, power gain cutoff frequency and size shrinkage of the device. Since these microstructures have high-frequency microwave performance, both devices can operate effectively in the millimeter-wave range, although vacuum microelectronic devices have higher voltages and powers. It also points out the need for high current density that is proportional to frequency but low resistance.