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一、引言多孔硅室温下较强的光致发光现象给全硅大规模光电集成电路和硅基发光器件的开发带来曙光，但要把它变为现实仍有许多问题要解决，就以发光机理为例，仍有不同意见[1].为此必须深入研究其特性，为探讨发光机理提供依据.已有作者观察到发光畴区[2]，测得多孔硅成分近于
I. INTRODUCTION The strong photoluminescence phenomenon of porous silicon at room temperature brings about the dawn to the development of all-silicon large-scale optoelectronic integrated circuits and silicon-based light-emitting devices. However, there are still many problems to be solved if it is to become a reality. Mechanism, for example, there are still different opinions [1] .Therefore, we must study its characteristics in depth, to provide a basis for exploring the mechanism of luminescence.Once the authors observed the light-emitting domain [2], measured porous silicon composition near