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采用射频等离子增强化学气相沉积方法制备了磷掺杂氢化非晶硅(a-Si:H)薄膜。通过Raman散射光谱研究了不同磷烷掺杂含量薄膜的微结构,利用分光光度计对薄膜的厚度、消光系数和折射率进行了模拟,用高阻仪测得了非晶硅薄膜暗电导率。结果表明:薄膜的中程有序度随着磷掺杂量(?)(体积分数)的增加而减小;折射率在(?)为0 8%时最大;在结构无序度随着(?)而增大的影响下,薄膜暗电导率在(?)为1%时达到最大,为8.41×10~(-3)S/cm。
Phosphor-doped hydrogenated amorphous silicon (a-Si: H) thin films were prepared by RF plasma enhanced chemical vapor deposition. The Raman scattering spectra were used to study the microstructure of films doped with different phosphine. The thickness, extinction coefficient and refractive index of films were simulated by spectrophotometer. The dark conductivity of amorphous silicon thin films was measured by high resistance meter. The results show that the mid-range order of the films decreases with the increase of phosphorus doping (volume fraction); the refractive index is the maximum at (?) Of 0 8% ?) Under the influence of increasing, the dark conductivity of the film reaches the maximum at (?) Of 1%, which is 8.41 × 10 -3 S / cm.