据《日本电子工业》期刊1970年12月报导,日本松下电气公司研制成一种所谓全新结构的悬臂式半导体二极管送话器。采用了高电阻率的长方形硅片作二极管基片(1.8毫米×0.8毫米×0.04毫米),在硅片中部两侧成尖锐的缺口,缺口的左右两端,一是P+区域,另一是N+区域,邻近缺口处为高阻 According to the “Japan Electronics Industry” magazine in December 1970 reported that Japan's Matsushita Electric has developed a so-called new structure of the cantilever semiconductor diode microphones. Rectangular silicon wafer with high resistivity (1.8 mm × 0.8 mm × 0.04 mm) is used as the rectangular substrate with high resistivity. Sharp flaws are formed on both sides of the central part of the silicon wafer. Left and right ends of the flaw are the P + region and the N + Area, near the gap at high resistance