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采用射频磁控溅射,通过传统的紫外曝光和湿法腐蚀的方法,制备了不同电极间距的金属-半导体-金属(MSM)结构Mg0.2Zn0.8O可见盲光电探测器。研究了器件的暗电流和响应度随电极间距的变化关系,当施加的电压没有达到贯穿电压的时候,暗电流和响应度均随着电极间距的增加而减小,并对其具体的机制进行了研究。
The radio frequency magnetron sputtering was used to fabricate the blind-photodetector Mg0.2Zn0.8O with different electrode spacings by conventional UV exposure and wet etching. The dark current and the responsivity of the device are studied with the variation of the electrode spacing. When the applied voltage does not reach the penetration voltage, the dark current and responsivity decrease with the increase of the electrode spacing, and the specific mechanism is studied Study.