论文部分内容阅读
李建明男31岁.1984年毕业于北京师范大学,1987年在北师大低能核物理研究所获硕士学位.现为中国科学院半导体研究所副研究员.主要从事半导体材料和离子注入工艺方面的研究.在硅材料表面改性和缺陷本征吸除两项属前沿性应用研究中取得有重要意义的创造性成果.对用于制造超大规模集成电路的直拉硅材料研究,发现向硅中注入氢形成的缺陷具有很高的热稳定性.据此,研制出了一种直拉硅表面迁移率提高25%的新型硅材料,具有国内外最高的表面霍尔迁移率,达1760cm~2/v·s.这种材料对超大规模集成电路的制作和提高硅集
Li Jianming Male, 31, graduated from Beijing Normal University in 1984 and received a master’s degree from the Institute of Low Energy Nuclear Physics, Beijing Normal University in 1987. Now he is an associate researcher at the Institute of Semiconductors, Chinese Academy of Sciences, mainly engaged in semiconductor materials and ion implantation process. In the silicon material surface modification and defect aspiration of two cutting-edge research has made significant innovative achievements.For the manufacture of very large-scale integrated circuit Czochralski silicon material, found that silicon into hydrogen formation Of defects with high thermal stability.Accordingly, a new type of silicon material with a 25% increase of surface mobility of Czochralski silicon has been developed with the highest surface Hall mobility at home and abroad of 1760cm 2 / v · s. This material makes very large silicon integrated circuits and silicon sets