对各种漂移型半导体探测器的锂漂移工艺,人们总希望漂移速度快、离子补偿好。通常采用的有三种方法:①烘箱漂移;②油循环漂移;③用低沸点或与硅锗漂移所需温度为沸点的化学试剂作散热介质的漂移。常用于硅的有辛烷、用于锗的有正戍烷、庚烷、氟里昂等。 本文侧重介绍Si(Li)漂移的辛烷漂移。 For a variety of drift-type semiconductor detector lithium drift technology, people always hope that the drift speed, good ion compensation. There are three commonly used methods: ① oven drift; ② oil circulation drift; ③ with low boiling point or silicon germanium drift temperature required for the boiling point of the chemical reagents for the heat transfer medium drift. Commonly used in silicon are octane, germanium for n-pentane, heptane, freons and so on. This article focuses on the octane drift of Si (Li) drift.