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用特别处理的石英舟生长纯度InAs晶体,不仅避免了Si沾污,而且能克服沾舟的困难.晶体的电学性质μ_(77)在54000～60000 cm~2/V·s之间,最高达68800 cm~2/V·s,n_(77)在1.5～2.0×10~(16)cm~(-3)范围,比一般石英舟生长的为好.用它作GaInAs气相外延的源,也能得到较好结果. 根据实验结果对InAs中的剩余施主作了进一步分析,认为它们主要是由Si(主要来自原料)、S、Na、Cu等杂质所构成,其总和在10~(16)cm~(-3)以上。另外,热处理实验结果表明,晶体中存在10~(15)cm~(-3)以上的结构缺陷,可能主要是As_(In)~(++).
The growth of pure InAs crystal with specially treated quartz boat not only avoids the contamination of Si, but also overcomes the difficulty of landing the boat.The electrical properties of the crystal μ_ (77) range from 54000 ~ 60000 cm ~ 2 / V · s up to 68800 cm ~ 2 / V · s, n_ (77) is in the range of 1.5 ~ 2.0 × 10 ~ (16) cm ~ (-3), which is better than that of the normal quartz boat.It is also used as the source of GaInAs vapor phase epitaxy We can get better results.According to the experimental results, the remaining donors in InAs are further analyzed, and they are mainly composed of Si (mainly from raw materials), S, Na, Cu and other impurities, the sum of them in 10 ~ (16) cm ~ (-3) or more. In addition, the results of heat treatment show that there are more than 10 ~ (15) cm ~ (-3) structural defects in the crystal, which may be mainly As_ (In) ~ (++).