美国橡树岭国家试验室的研究人员研制出一种超饱和的硅合金,共电学性能大大超过一般的半导体。采用激光方法可使离子注入半导体硅中的“杂质”原子大大增加,从而提高和改进其电学性能,并消除因离子注入对晶体结构造成的所有损伤。此 Researchers at the Oak Ridge National Laboratory in the United States have developed a supersaturated silicon alloy that has considerably more electrical properties than the usual semiconductors. The use of a laser method greatly increases the number of “impurity” atoms that are implanted into the semiconductor silicon by ion implantation, thereby improving and improving its electrical properties and eliminating any damage to the crystal structure caused by ion implantation. this