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A new SOIself-balance(SB)super-junction(SJ)pLDMOS with a self-adaptive charge(SAC)layer and its physical model are presented. The SB is an effective way to realize charges balance(CB). The substrate-assisted depletion(SAD) effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC.At the same time,high concentration dynamic self-adaptive electrons effectively enhance the electric field (EI) of the dielectric buried layer and increase breakdown voltage(BV). EI=600 V/μm and BVD–237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer.The optimized structure realizes the specific on resistance(Ron;sp) of 0.01319 Ω·cm2,FOM(FOM=BV2/Ron;sp) of 4.26 MW/cm2 under a 11μm length(Ld)drift region.
A new SOI self-balance (SB) super-junction (SJ) pLDMOS with a self-adaptive charge (SAC) layer and its physical model are presented. The SB-an effective way to realize charges balance (CB) depletion (SAD) effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive neural effectively enhance the electric field (EI) of the dielectric buried layer and increase breakdown voltage (BV) EI = 600 V / μm and BVD-237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance (Ron; sp) of 0.01319 Ω · cm 2, FOM (FOM = BV 2 / Ron; sp) of 4.26 MW / cm 2 under a 11 μm length (Ld) drift region.