论文部分内容阅读
本文介绍直径约为2厘米的半导体薄片的表面杂质分析的实验技术.讨论了样品的火花剥离过程以及给出了说明剥蚀了的表面的形态的表面分布。讨论了鉴别表面与体内杂质的方法,同时指出:可以在灵敏度高到约3×10~(11)原子/厘米~2(单层的千分之一)的情况下确定出表面沾污。本文给出并讨论了由各种不同的半导体表面和薄层的分析所得的结果。
This article describes the experimental techniques for surface impurity analysis of semiconductor wafers about 2 cm in diameter and discusses the spark stripping process and the surface distribution of the morphology of the ablated surface. Discusses methods for identifying surface and in-body impurities, noting that surface contamination can be determined with sensitivity as high as about 3 × 10-11 atoms / cm 2 (one-thousandth of a single layer). This paper presents and discusses the results obtained from the analysis of a variety of different semiconductor surfaces and lamellae.