论文部分内容阅读
本文作者在自己组装的立式ＭＯＣＶＤ设备上，成功地应用高真空生长技术，于１０５０℃的高温条件下，在硅上外延生长了γ－Ａｌ２Ｏ３薄膜．从ＲＨＥＥＤ看到（１００）硅上生长的薄膜是（１００）立方单晶γ－Ａｌ２Ｏ３的衍射图样；平移样品，图样并不发生变化．Ｘ射线双晶衍射看到，除了硅的（４００）峰和（２００）峰以外，只在２θ为４５°处有一个低而宽的小峰．ＸＰＳ谱给出氧的１ｓ峰位为５３２．３ｅＶ，Ａｌ的２ｐ峰位为７５．４ｅＶ，将他们与α－Ａｌ２Ｏ３比较，对应峰位移动了约３．５ｅＶ．俄歇谱说明其铝氧组分比近于γ－Ａｌ２Ｏ３．说明在我们实验室里确实长出单晶γ－Ａｌ２Ｏ３薄膜，与衬底的结晶关系是（１００）γ－Ａｌ２Ｏ３／／（１００）Ｓｉ，［０１０］γ－Ａｌ２Ｏ３／／［０１０］Ｓｉ．
The authors successfully applied high-vacuum growth technology to their own assembled vertical MOCVD equipment to epitaxially grow γ-Al2O3 films on silicon at a high temperature of 1050 ° C. The film grown on (100) silicon from RHEED was a diffraction pattern of (100) cubic single crystal γ-Al2O3; the sample was shifted and the pattern did not change. X-ray double-crystal diffraction shows that there is only a small, wide, small peak at 2θ of 45 °, except for the (400) peak and the (200) peak of silicon. The XPS spectrum shows that the peak position of 1s for oxygen is 532.3eV and the peak position for 2p of Al is 75.4eV. When compared with α-Al2O3, the corresponding peak position is shifted by about 3.5eV. Auger spectrum shows that the ratio of its components is close to γ-Al2O3. It shows that the crystal structure of γ-Al2O3 film grown in our laboratory is (100) γ-Al2O3 // (100) Si, [010] γ-Al2O3 // [010] Si.