研究了一种2μm波段GaSb基亚波长光栅反射镜,讨论了亚波长光栅的各参数对反射谱的影响。对于中心波长为2μm的TM模式,反射镜具有大宽带和极高的反射率,反射带宽与中心波长之比大于26%(反射率大于99%),波长为1.895~2.08μm时,反射率达到99.9%以上,带宽达185nm,同时TE模的反射率低于垂直腔面发射半导体激光器的激射条件(反射率小于95%)。该结构的各个参数所允许的制作容差较大,有利于在垂直腔面发射半导体激光器上的单片集成。 A 2μm GaSb-based sub-wavelength grating mirror was studied, and the influence of sub-wavelength grating parameters on the reflection spectrum was discussed. For a TM mode with a central wavelength of 2 μm, the mirror has a large broadband and a very high reflectivity, the ratio of the reflection bandwidth to the center wavelength is greater than 26% (reflectivity> 99%), and the reflectivity is reached at 1.895 to 2.08 μm 99.9% with a bandwidth of 185 nm, and the TE mode reflectance is lower than that of the vertical cavity surface emitting semiconductor laser (reflectivity less than 95%). The allowable manufacturing tolerance of each parameter of the structure is larger, which is beneficial to the monolithic integration on the vertical cavity surface emitting semiconductor laser.