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采用液态的叔丁基砷 (tertiarybularsine ,TBAs)和叔丁基磷 (tertiarybulphosphine ,TBP)为源材料 ,用有机金属气相外延 (metalorganicvaporphaseepitaxy ,MOVPE)生长了与InP衬底晶格匹配的InGaAs/InP超晶格 .高精度X射线衍射的结果表明 ,在In GaAs与InP单异质结界面处 ,存在一个压应变的界面层 .可利用相同的界面模型来模拟InGaAs/InP超晶格的X射线衍射实验结果 .该结果表明 ,TBAs吹扫InP表面对界面应变产生很大的影响 .为此提出了一种新的界面气体转换顺序来控制InGaAs/InP超晶格的界面应变 ,它先把Ⅲ族源转入反应室 ,以此来降低TBAs对InP表面的影响 ,由此得到的超晶格的平均应变减小 ,光致发光的峰值能量出现蓝移 .
InGaAs / InP superlattice lattice matched with InP substrate was grown by metalorganic vapor phase epitaxy (MOVPE) using the liquid tertiarybularsine (TBAs) and tertiarybutyphosphine (TBP) as source materials. Lattice.The results of high-precision X-ray diffraction show that there exists a compressive-strain interface layer at the interface of In GaAs and InP single heterojunction.The X-ray diffraction of InGaAs / InP superlattice can be simulated by the same interface model The experimental results show that the TBP purges the InP surface greatly influences the interfacial strain.Therefore, a new interfacial gas transition sequence is proposed to control the interfacial strain of the InGaAs / InP superlattice. Source into the reaction chamber to reduce the influence of TBAs on the InP surface. The average strain of the resulting superlattice decreases and the peak photoluminescence energy shifts blue.